PART |
Description |
Maker |
ST-4 |
MINI-NOISE DIODES 10 KHZ TO 3 GHZ 0.00001 GHz - 3 GHz, SILICON, NOISE DIODE
|
Micronetics, Inc.
|
AMMC-5023 |
AMMC-5023 · 23 GHz Low Noise Amplifier 23 GHz Low Noise Amplifier (21.2-26.5 GHz)
|
Agilent (Hewlett-Packard) Agilent(Hewlett-Packard)
|
BFQ19S |
RF-Bipolar - For low noise, low distortion broadband amplifiers in wireless systems up to 1.5 GHz NPN Silicon RF Transistor
|
Infineon Technologies AG
|
PHT41435B |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Teledyne Technologies I...
|
PHT41470B |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Teledyne Technologies I...
|
AT-41486 AT-41486-BLK |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Agilent(Hewlett-Packard...
|
Q62702-F655 BFQ60 |
LOW NOISE NPN SILICON MICROVAVE TRANSISTOR UP TO 2 GHz
|
SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
AT-41435 AT41435 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor Search -----> AT-41435
|
Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
|
AMMC-6231 |
AMMC-6231 · 16-32 GHz Low Noise Amplifier 16?2 GHz Low Noise Amplifier
|
Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
|
Q62702-F659 BFQ29 BFQ29P |
From old datasheet system NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.)
|
SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|